ANISOTROPIC PHOTOLUMINESCENCE BEHAVIOR OF VERTICAL ALGAAS STRUCTURES GROWN ON GRATINGS

被引：29

作者：

VERMEIRE, G

YU, ZQ

VERMAERKE, F

BUYDENS, L

VANDAELE, P

DEMEESTER, P

机构：

[1] University of Gent, IMEC, Laboratory for Electromagnetism and Acoustics, B-9000 Gent

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90509-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The formation of vertical AlGaAs quantum wells during MOVPE growth of AlGaAs layers on submicron gratings has been investigated. The influence of the growth temperature, growth velocity, V/III ratio and the overall Al content has been examined and explained using surface diffusion effects of the group III atoms (or reactant species). 77 K PL measurements show a polarization anisotropy and indicate lateral quantum confinement. Also the growth of QWWs on submicron gratings is reported, showing very large PL intensities and polarization anisotropy. Finally the realization of QWWs has been proposed by growing AlxGa1-xAs/AlyGa1-yAs QWs on gratings and based on the different surface mobilities of Ga and Al.

引用

页码：513 / 518

页数：6

共 17 条

[1] FACET GROWTH OF ALGAAS ON GAAS WITH SIO2 GRATINGS BY MOCVD AND APPLICATIONS TO QUANTUM WELL WIRES [J].