THE USE OF STABILIZED CMOS DELAY-LINES FOR THE DIGITIZATION OF SHORT-TIME INTERVALS

被引:158
作者
RAHKONEN, TE
KOSTAMOVAARA, JT
机构
[1] Department of Electrical Engineering, University of Oulu, Linnanmaa
关键词
D O I
10.1109/4.231325
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper discusses the basic advantages and limitations of using integrated digital CMOS delay lines for the digitization of short time intervals. Accuracies of 6-7 b and single-shot resolutions from 0.1 to 10 ns are demonstrated to be realizable using fully integrated, tapped, and voltage-controlled CMOS delay lines as a time base for the measurement.
引用
收藏
页码:887 / 894
页数:8
相关论文
共 9 条
[1]   A CMOS 4-CHANNEL X 1K TIME MEMORY LSI WITH 1-NS/B RESOLUTION [J].
ARAI, Y ;
MATSUMURA, T ;
ENDO, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (03) :359-364
[2]   DIGITALLY CONTROLLED OSCILLATOR [J].
GIEBEL, B ;
LUTZ, J ;
OLEARY, PL .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (03) :640-645
[3]   A VARIABLE DELAY-LINE PLL FOR CPU - COPROCESSOR SYNCHRONIZATION [J].
JOHNSON, MG ;
HUDSON, EL .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) :1218-1223
[4]   A 30-MHZ HYBRID ANALOG DIGITAL CLOCK RECOVERY CIRCUIT IN 2-MU-M CMOS [J].
KIM, B ;
HELMAN, DN ;
GRAY, PR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (06) :1385-1394
[5]   A 3-NS RANGE, 8-PS RESOLUTION, TIMING GENERATOR LSI UTILIZING SI BIPOLAR GATE ARRAY [J].
OTSUJI, T ;
NARUMI, N .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (05) :806-811
[6]   MATCHING PROPERTIES OF MOS-TRANSISTORS [J].
PELGROM, MJM ;
DUINMAIJER, ACJ ;
WELBERS, APG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (05) :1433-1440
[7]   REVIEW OF SUB-NANOSECOND TIME-INTERVAL MEASUREMENTS [J].
PORAT, DI .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (05) :36-51
[8]  
RAHKONEN T, 1991, P IEEE S CIRC SYST S, V4, P2252
[9]  
RAISANENRUOSALA.E, 1991, P IEEE ISCAS, V5, P2573