SILICON DIOXIDE THIN-FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION FROM SILICON TETRAACETATE

被引：17

作者：

MARUYAMA, T

TAGO, T

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University, Kyoto

来源：

THIN SOLID FILMS | 1993年 / 232卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90009-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon dioxide thin films were prepared by a direct photochemical vapor deposition method, The raw material was silicon tetraacetate which is non-toxic and easy to handle. A 6 W low-pressure mercury lamp was used as a light source. Thin films were obtained in an inert atmosphere at a substrate temperature of above 110-degrees-C. The deposition rate was higher than for thermal chemical vapor deposition, which is only possible in the presence of oxygen gas.

引用

页码：201 / 203

页数：3

共 5 条

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[2] SILICON DIOXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM SILICON TETRAACETATE
MARUYAMA, T
SHIONOYA, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2253 - L2254
[3] DIRECT PHOTOCHEMICAL DEPOSITION OF SIO2 FROM THE SI2H6+O2 SYSTEM
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[5] Sarkozy R. F., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P68

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