IN-SITU OBSERVATION OF MONOLAYER STEPS DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE BY SCANNING ELECTRON-MICROSCOPY

被引：31

作者：

HOMMA, Y ^{[1
]}

OSAKA, J ^{[1
]}

INOUE, N ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 4B期

关键词：

SCANNING ELECTRON MICROSCOPY; IN-SITU OBSERVATION; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MONOLAYER STEP;

D O I：

10.1143/JJAP.33.L563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have applied scanning electron microscopy (SEM) for in situ observation of molecular beam epitaxy (MBE) of GaAs. Monolayer steps on a GaAs (001) surface are imaged by secondary electrons during MBE growth. The step structure change is observed between the step-bunched surface during growth interruption and the monolayer-stepped surface during growth.

引用

页码：L563 / L566

页数：4

共 16 条

[1] SECONDARY-ELECTRON IMAGING OF MONOLAYER STEPS ON A CLEAN SI(111) SURFACE [J].

HOMMA, Y ;

TOMITA, M ;

HAYASHI, T .

SURFACE SCIENCE, 1991, 258 (1-3) :147-152

[2] OBSERVATION OF ATOMIC STEP MORPHOLOGY ON SILICON-OXIDE SURFACES [J].

HOMMA, Y ;

SUZUKI, M ;

YABUMOTO, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :2055-2058

[3] ATOMIC STEP IMAGING ON SILICON SURFACES BY SCANNING ELECTRON-MICROSCOPY [J].

HOMMA, Y ;

TOMITA, M ;

HAYASHI, T .

ULTRAMICROSCOPY, 1993, 52 (02) :187-192

[4]

Ichikawa M., 1989, Material Science Reports, V4, P147, DOI 10.1016/S0920-2307(89)80004-0

[5] OBSERVATION OF SI(111) SURFACE-TOPOGRAPHY CHANGES DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH USING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

ICHIKAWA, M ;

DOI, T .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1141-1143

[6]

IDA T, 1992, PHYS REV B, V46, P1905

[7] MBE MONOLAYER GROWTH-CONTROL BY INSITU ELECTRON-MICROSCOPY [J].

INOUE, N .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :75-82

[8] REAL-TIME MU-RHEED OBSERVATIONS OF GAAS-SURFACES DURING GROWTH WITH ALTERNATING SOURCE SUPPLY [J].

ISU, T ;

HATA, M ;

WATANABE, A .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :210-215

[9] SURFACE STEPS IMAGED BY SECONDARY ELECTRONS [J].

MILNE, RH .

ULTRAMICROSCOPY, 1989, 27 (04) :433-437

[10] INSITU OBSERVATION OF ROUGHENING PROCESS OF MBE GAAS SURFACE BY SCANNING REFLECTION ELECTRON-MICROSCOPY [J].

OSAKA, J ;

INOUE, N ;

MADA, Y ;

YAMADA, K ;

WADA, K .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :120-123

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