MBE MONOLAYER GROWTH-CONTROL BY INSITU ELECTRON-MICROSCOPY

A molecular beam epitaxy/scanning reflection electron microscope/scanning electron microscope (MBE-SREM-SEM) hybrid system is developed as an in-situ observation technique for study and control of growth of GaAs and AlGaAs. The resolution is 50 nm for SREM and 30 nm for SEM at 10 s/frame observation rate. The highest observation rate is 1 s/frame for SREM and 1/60 s/frame for SEM. Three applications are established: The observation of quick, transient growth processes to clarify the growth mechanism, the measurement of material properties under actual growth conditions to understand and control growth, and growth control by in-process monitoring, in which a micron scale lateral growth of Ga/Al monolayer is developed.