SMALL-SIGNAL CHARACTERISTICS OF N+-GE GATE ALGAAS/GAAS MISFETS

被引：3

作者：

FUJITA, S

HIRANO, M

MIZUTANI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 10期

关键词：

D O I：

10.1109/55.17830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：518 / 520

页数：3

共 7 条

[1]

ARAI K, 1985, INT PHYS C SERIES, V79, P631

[2]

Baratte H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P444

[3] A HIGH-SPEED FREQUENCY-DIVIDER USING N+-GE GATE ALGAAS/GAAS MISFETS [J].

FUJITA, S ;

HIRANO, M ;

MAEZAWA, K ;

MIZUTANI, T .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :226-227

[4] CHARACTERIZATION OF HETEROSTRUCTURE COMPLEMENTARY MISFET CIRCUITS EMPLOYING THE NEW GATE CURRENT MODEL [J].

FUJITA, S ;

MIZUTANI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (09) :1889-1896

[5] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J].

MATSUMOTO, K ;

OGURA, M ;

WADA, T ;

HASHIZUME, N ;

YAO, T ;

HAYASHI, Y .

ELECTRONICS LETTERS, 1984, 20 (11) :462-463

[6]

MIZUTANI T, 1987, IEDM, P603

[7] A GAAS GATE HETEROJUNCTION FET [J].

SOLOMON, PM ;

KNOEDLER, CM ;

WRIGHT, SL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :379-381

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