A HIGH-SPEED FREQUENCY-DIVIDER USING N+-GE GATE ALGAAS/GAAS MISFETS

被引：2

作者：

FUJITA, S

HIRANO, M

MAEZAWA, K

MIZUTANI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 05期

关键词：

D O I：

10.1109/EDL.1987.26611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：226 / 227

页数：2

共 11 条

[1] THRESHOLD VOLTAGE BEHAVIOR FOR WSI/ALXGA1-XAS/GAAS MIS-LIKE HETEROSTRUCTURE FET [J].

ARAI, K ;

MIZUTANI, T ;

YANAGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L623-L625

[2]

ARAI K, 1985, INT PHYS C SERIES, V79, P631

[3] ENHANCEMENT-MODE METAL/(AL, GA)AS/GAAS BURIED-INTERFACE FIELD-EFFECT TRANSISTOR (BIFET) [J].

DRUMMOND, TJ ;

KOPP, W ;

ARNOLD, D ;

FISCHER, R ;

MORKOC, H ;

ERICKSON, LP ;

PALMBERG, PW .

ELECTRONICS LETTERS, 1983, 19 (23) :986-987

[4] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J].

KATAYAMA, Y ;

MORIOKA, M ;

SAWADA, Y ;

UEYANAGI, K ;

MISHIMA, T ;

ONO, Y ;

USAGAWA, T ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03) :L150-L152

[5] BARRIER HEIGHT IN INDIRECT BANDGAP ALGAAS/GAAS HETERO-JUNCTION DETERMINED WITH N-SEMICONDUCTOR INSULATOR SEMICONDUCTOR DIODES [J].

MAEZAWA, K ;

MIZUTANI, T ;

YANAGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (07) :L557-L559

[6] LARGE TRANSCONDUCTANCE N+-GE GATE ALGAAS/GAAS MISFET WITH THIN GATE INSULATOR [J].

MAEZAWA, K ;

MIZUTANI, T ;

ARAI, K ;

YANAGAWA, F .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :454-456

[7] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J].

MATSUMOTO, K ;

OGURA, M ;

WADA, T ;

HASHIZUME, N ;

YAO, T ;

HAYASHI, Y .

ELECTRONICS LETTERS, 1984, 20 (11) :462-463

[8] GIGABIT LOGIC OPERATION WITH ENHANCEMENT-MODE GAAS-MESFET ICS [J].

MIZUTANI, T ;

KATO, N ;

OSAFUNE, K ;

OHMORI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :199-204

[9]

MIZUTANI T, 1985, INT PHYS C SERIES, V79, P733

[10] A GAAS GATE HETEROJUNCTION FET [J].

SOLOMON, PM ;

KNOEDLER, CM ;

WRIGHT, SL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :379-381

← 1 2 →