ELECTRICAL PORPERTIES OF TE-SI HETEROJUNCTIONS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] AN INFRARED SENSITIVE GE-TE HETEROJUNCTION [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (12) : 2150 - &

[3] GETE-GAAS TUNNEL JUNCTION - A NEGATIVE-RESISTANCE SCHOTTKY-TYPE BARRIER [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6049 - &

[4] PHOTOVOLTAIC CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (04) : 295 - &

[5] THIN FILM CDS-CDTE HETEROJUNCTION DIODES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (08) : 749 - &

[6] GOSWAMI A, 1968, INDIAN J PURE AP PHY, V6, P416

[7] OPTICAL PROPERTIES OF VACUUM-EVAPORATED SELENIUM AND TELLURIUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5527 - &

[8] KANDILAROV B, 1964, PHYS STAT SOL, V8, P897

[9] KOMASHCHENKO VN, 1970, SOV PHYS SEMICOND+, V3, P1001

[10] KOT MV, 1967, SOV PHYS SEMICOND+, V1, P155

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] AN INFRARED SENSITIVE GE-TE HETEROJUNCTION [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (12) : 2150 - &

[3] GETE-GAAS TUNNEL JUNCTION - A NEGATIVE-RESISTANCE SCHOTTKY-TYPE BARRIER [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6049 - &

[4] PHOTOVOLTAIC CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (04) : 295 - &

[5] THIN FILM CDS-CDTE HETEROJUNCTION DIODES [J]. SOLID-STATE ELECTRONICS, 1968, 11 (08) : 749 - &

[6] GOSWAMI A, 1968, INDIAN J PURE AP PHY, V6, P416

[7] OPTICAL PROPERTIES OF VACUUM-EVAPORATED SELENIUM AND TELLURIUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5527 - &

[8] KANDILAROV B, 1964, PHYS STAT SOL, V8, P897

[9] KOMASHCHENKO VN, 1970, SOV PHYS SEMICOND+, V3, P1001

[10] KOT MV, 1967, SOV PHYS SEMICOND+, V1, P155