GETE-GAAS TUNNEL JUNCTION - A NEGATIVE-RESISTANCE SCHOTTKY-TYPE BARRIER

被引：2

作者：

CHANG, LL

ESAKI, L

STILES, PJ

机构：

[1] IBM Watson Research Center, Yorktown Heights

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 13期

关键词：

D O I：

10.1063/1.1656114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.

引用

页码：6049 / &

共 10 条

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