IMPLANTATION GETTERING IN SILICON

被引：8

作者：

GONG, SS ^{[1
]}

SCHRODER, DK ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 02期

关键词：

D O I：

10.1016/0038-1101(87)90151-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：209 / 211

页数：3

共 19 条

[1] IMPURITY GETTERING OF SILICON DAMAGE GENERATED BY ION-IMPLANTATION THROUGH SIO2 LAYERS [J].

BEYER, KD ;

YEH, TH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2527-2530

[2] SILICON INTERSTITIAL GENERATION BY ARGON IMPLANTATION [J].

BRONNER, GB ;

PLUMMER, JD .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :510-512

[3] PRECIPITATION-INDUCED CURRENTS AND GENERATION-RECOMBINATION CURRENTS IN INTENTIONALLY CONTAMINATED SILICON P+N JUNCTIONS [J].

BUSTA, HH ;

WAGGENER, HA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1424-1429

[4] PLATINUM GETTERING IN SILICON BY PHOSPHORUS [J].

FALSTER, R .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :737-739

[5] REDUCTION OF LEAKAGE BY IMPLANTATION GETTERING IN VLSI CIRCUITS [J].

GEIPEL, HJ ;

TICE, WK .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (03) :310-317

[6]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[7]

GOODMAN AM, 1983, RCA REV, V44, P326

[8]

GRAFF K, 1977, SEMICONDUCTOR SILICO, P575

[9]

GULDBERG J, 1971, SOLID ST ELECTRON, V14, P1285

[10] COMPARISON OF AR-ION, O-ION, AND CL-ION IMPLANT-DAMAGE GETTERING OF GOLD FROM SILICON USING METAL-OXIDE SILICON TECHNIQUES [J].

NASSIBIAN, AG ;

GOLJA, B .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6168-6173

← 1 2 →