IMPURITY GETTERING OF SILICON DAMAGE GENERATED BY ION-IMPLANTATION THROUGH SIO2 LAYERS

被引：11

作者：

BEYER, KD ^{[1
]}

YEH, TH ^{[1
]}

机构：

[1] IBM CORP,DIV GEN PROD,SAN JOSE,CA 95193

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 11期

关键词：

D O I：

10.1149/1.2123598

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2527 / 2530

页数：4

共 16 条

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[7] A VAPOUR ETCHING TECHNIQUE FOR PHOTOLITHOGRAPHY OF SILICON DIOXIDE [J].

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