MOBILITY ANISOTROPY AND MAGNETORESISTANCE AT AN (INAS)1(GAAS)1-INP HETEROINTERFACE GROWN ON A (001) VICINAL INP SUBSTRATE

被引：3

作者：

YAMADA, S

FUKUI, T

SAITO, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：960 / 963

页数：4

共 12 条

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