THE STRUCTURE OF CHALCOGEN PAIRS IN SILICON

被引：10

作者：

GREULICHWEBER, S

NIKLAS, JR

SPAETH, JM

机构：

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1989年 / 1卷 / 01期

关键词：

D O I：

10.1088/0953-8984/1/1/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：35 / 45

页数：11

共 14 条

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[4]

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[5]

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SPAETH, JM .

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[8] DIVACANCY IN SILICON - HYPERFINE INTERACTIONS FROM ELECTRON-NUCLEAR DOUBLE-RESONANCE MEASUREMENTS .2. [J].

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[9] THE NEGATIVELY CHARGED VACANCY IN SILICON - HYPERFINE INTERACTIONS FROM ENDOR MEASUREMENTS [J].

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MULLER, SH ;

AMMERLAAN, CAJ .

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[10]

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