DEFECT PAIRING DIFFUSION, AND SOLUBILITY STUDIES IN SELENIUM-DOPED SILICON

被引：50

作者：

VYDYANATH, HR ^{[1
]}

LORENZO, JS ^{[1
]}

KROGER, FA ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 12期

关键词：

D O I：

10.1063/1.324560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5928 / 5937

页数：10

共 10 条

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FULLER, CS ;

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[3]

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[5]

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MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[7]

NEUBERGER M, 1969, SILICON DATA SHEETS

[8] SELENIUM IMPLANTATION INTO SILICON STUDIED BY DLTS TECHNIQUE [J].

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PELOUS, G ;

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APPLIED PHYSICS LETTERS, 1977, 31 (08) :525-527

[9]

SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P270

[10]

Van der Pauw L.J., 1958, PHILIPS TECH REV, V20, P220, DOI DOI 10.4236/JMP.2013.411179

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