DEPOSITION AND ELECTRICAL-PROPERTIES OF INSITU PHOSPHORUS-DOPED SILICON FILMS FORMED BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：39

作者：

LEARN, AJ

FOSTER, DW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1898 / 1904

页数：7

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