STUDY OF GA ION-IMPLANTATION DAMAGE AND ANNEALING EFFECT IN SN-DOPED INP USING RAMAN-SCATTERING

被引：40

作者：

YU, SJ ^{[1
]}

ASAHI, H ^{[1
]}

EMURA, S ^{[1
]}

SUMIDA, H ^{[1
]}

GONDA, S ^{[1
]}

TANOUE, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：856 / 860

页数：5

共 20 条

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[6] HIRAYAMA Y, 1988, J VAC SCI TECHNOL B, V6, P1088
[7] LATERAL GAAS PHOTODETECTOR FABRICATED BY GA FOCUSED-ION-BEAM IMPLANTATION
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[8] THE EFFECTS OF ION-IMPLANTATION DAMAGE ON THE 1ST-ORDER RAMAN-SPECTRA OF GAP
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[9] MYERS DR, 1982, I PHYS C SER, V65, P635
[10] FORMATION OF HIGH-RESISTANCE REGION IN GAAS BY GA FOCUSED-ION-BEAM IMPLANTATION
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