FORMATION OF EPITAXIAL NIO BY OXYGEN IMPLANTATION IN [100] NI

[11] GROWTH AND STRUCTURE OF NICKEL-OXIDE ON NICKEL CRYSTAL FACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) : 1495 - 1503

[12] DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT [J]. COMPUTER PHYSICS COMMUNICATIONS, 1974, 7 (02) : 85 - 94

[13] MAUREL B, 1980, THESIS PARIS

[14] PRECISION ABSOLUTE THIN-FILM STANDARD REFERENCE TARGETS FOR RUTHERFORD BACKSCATTERING MICROANALYSIS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 721 - 726

[15] 100 KEV PROTON CHANNELING IN ANODICALLY OXIDIZED NICKEL CRYSTALS [J]. THIN SOLID FILMS, 1977, 44 (02) : 163 - 168

[16] STUDY OF DEFECTS IN QUENCHED NICKEL BY ELECTRICAL RESISTIVITY METHOD [J]. JOURNAL DE PHYSIQUE, 1972, 33 (10): : 895 - &

[17] MULTIPLE-SCATTERING OF MEV LIGHT-IONS THROUGH THIN AMORPHOUS ANODIC SIO2 LAYERS FORMED ON SILICON SINGLE-CRYSTALS [J]. PHYSICAL REVIEW B, 1979, 19 (11): : 5581 - 5597

[18] CALCULATION OF BACKSCATTERING-CHANNELING SURFACE PEAK [J]. SURFACE SCIENCE, 1978, 77 (03) : 513 - 522

[19] ANOMALOUS THERMAL DEPENDENCE OF EXTRA SPOTS FROM A NI(100) AND S C(2BY 2) LOW-ENERGY-ELECTRON-DIFFRACTION PATTERN - DIFFRACTION FROM ADSORBED LAYER ONLY [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (07) : 993 - 996

[20] VELYKHANOV, 1973, 3RD MET OBR ISSL SOS, V1, P76

[11] GROWTH AND STRUCTURE OF NICKEL-OXIDE ON NICKEL CRYSTAL FACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) : 1495 - 1503

[12] DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT [J]. COMPUTER PHYSICS COMMUNICATIONS, 1974, 7 (02) : 85 - 94

[13] MAUREL B, 1980, THESIS PARIS

[14] PRECISION ABSOLUTE THIN-FILM STANDARD REFERENCE TARGETS FOR RUTHERFORD BACKSCATTERING MICROANALYSIS [J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 721 - 726

[15] 100 KEV PROTON CHANNELING IN ANODICALLY OXIDIZED NICKEL CRYSTALS [J]. THIN SOLID FILMS, 1977, 44 (02) : 163 - 168

[16] STUDY OF DEFECTS IN QUENCHED NICKEL BY ELECTRICAL RESISTIVITY METHOD [J]. JOURNAL DE PHYSIQUE, 1972, 33 (10): : 895 - &

[17] MULTIPLE-SCATTERING OF MEV LIGHT-IONS THROUGH THIN AMORPHOUS ANODIC SIO2 LAYERS FORMED ON SILICON SINGLE-CRYSTALS [J]. PHYSICAL REVIEW B, 1979, 19 (11): : 5581 - 5597

[18] CALCULATION OF BACKSCATTERING-CHANNELING SURFACE PEAK [J]. SURFACE SCIENCE, 1978, 77 (03) : 513 - 522

[19] ANOMALOUS THERMAL DEPENDENCE OF EXTRA SPOTS FROM A NI(100) AND S C(2BY 2) LOW-ENERGY-ELECTRON-DIFFRACTION PATTERN - DIFFRACTION FROM ADSORBED LAYER ONLY [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (07) : 993 - 996

[20] VELYKHANOV, 1973, 3RD MET OBR ISSL SOS, V1, P76