MODEL FOR DEFECT-IMPURITY PAIR DIFFUSION IN SILICON

被引：57

作者：

MULVANEY, BJ

RICHARDSON, WB

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 18期

关键词：

D O I：

10.1063/1.98650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1439 / 1441

页数：3

共 24 条

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[3]

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[4]

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[7]

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[8] MEASUREMENT OF SILICON INTERSTITIAL DIFFUSIVITY [J].

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DUTTON, RW .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :319-321

[9] SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION [J].

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ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :937-939

[10]

HINDMARCH AC, 1986, NUMERICAL METHODS DI, P147

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