LOCAL SELECTIVE HOMOEPITAXY OF SILICON AT REDUCED TEMPERATURES USING A SILICON-IODINE TRANSPORT-SYSTEM

Selective deposition of homoepitaxial silicon can be achieved using silicon-iodine transport within a quartz ampoule at temperatures down to nearly 600°C. A segregation of gaseous components due to their density differences and a temperature gradient along the deposition region serve to optimize the silicon deposition. The variation of the epitaxial growth process with total pressure and temperature has also been studied. The process shows basic advantages for silicon device applications. © 1978.