CONFIRMATION OF ALUMINUM-INDUCED NEGATIVE CHARGE IN NATIVE SILICON DIOXIDE

被引：11

作者：

SHIMIZU, H ^{[1
]}

MUNAKATA, C ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 10期

关键词：

SILICON WAFER; NATIVE OXIDE LAYER; ALUMINUM; RCA SOLUTION; OXIDE CHARGE; AC SURFACE PHOTOVOLTAGE; SCANNING PHOTON MICROSCOPE;

D O I：

10.1143/JJAP.30.2466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ac surface photovoltage (SPV) disappears in p-type silicon (Si) wafers rinsed with an aluminum (Al)-contaminated RCA solution, while high ac SPV appears in n-type Si wafers. This is because large negative charge due to the metal impurity causes an accumulation region at the p-type wafer surface. The negative charge vanishes with the removal of the oxide. This means that Al resides in the native oxide.

引用

页码：2466 / 2467

页数：2

共 9 条

[1]

EISENMAN G, 1965, ADV ANAL CHEM INSTRU, P339

[2]

KERN W, 1970, RCA REV, V31, P187

[3] A SCANNING PHOTON MICROSCOPE FOR NON-DESTRUCTIVE OBSERVATIONS OF CRYSTAL DEFECT AND INTERFACE TRAP DISTRIBUTIONS IN SILICON-WAFERS [J].