DONOR DIFFUSION INTO GAAS FROM GROUP 6 COMPOUNDS

被引：7

作者：

FRIESER, RG

机构：

来源：

关键词：

D O I：

10.1149/1.2423668

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：697 / &

共 14 条

[1]

BOND NL, 1956, BELL SYSTEM TECH J, V35, P1209

[2]

CUNNEL TA, 1960, SOLIDSTATE ELECTRONI, V1, P97

[3] DIFFUSION AND OXIDE MASKING IN SILICON BY THE BOX METHOD [J].

DASARO, LA .

[4] THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J].

FANE, RW ;

GOSS, AJ .

[5] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS INTO GERMANIUM [J].

FULLER, CS .

PHYSICAL REVIEW, 1952, 86 (01) :136-137

[6] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

[7] DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

GOLDSTEIN, B .

PHYSICAL REVIEW, 1961, 121 (05) :1305-&

[8] THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL [J].

SULLIVAN, MV ;

KOLB, GA .

TANNENBAUM, E .

[10]

VANDENBOOMGAARD J, 1957, PHILIPS RES REP, V12, P127