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DEPTH PROFILING OF MBE GAINAS AND DETECTION OF THE GAINAS-INP INTERFACE USING ANODIC-OXIDATION

被引：6
作者：
FISCHER, CW
HSIEH, KH
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 12期
关键词：
D O I：
10.1149/1.2108454
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：2483 / 2485
页数：3
相关论文
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