DIRECT OBSERVATION OF VERY SLOW TRAPS AFTER HOMOGENEOUS CHARGE INJECTION IN MOS CAPACITORS

被引：6

作者：

KERBER, M

SCHWALKE, U

NEPPL, F

机构：

[1] Siemens AG, Corporate Research and Development, 8000 München 83, Microelectronics

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 02期

关键词：

Capacitors;

D O I：

10.1016/0038-1098(90)90360-N

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A modification of the quasistatic CV-method is presented which allows the charging time of very slow traps to be measured and slow and fast interface states in a metal-oxide-semiconductor (MOS) system to be distinguished. Applying this method to MOS capacitors after Fowler Nordheim charge injection gives strong evidence that in addition to fast interface states very slow traps are created near the semiconductor interface. These are charged by tunnelling rather than a thermally activated processes. © 1990.

引用

页码：147 / 149

页数：3

共 11 条

[1] DEGRADATION OF METAL-OXIDE SEMICONDUCTOR STRUCTURES BY FOWLER-NORDHEIM TUNNELING INJECTION [J].