YB-DOPED INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING A BETA-DIKETONATE PRECURSOR

被引：9

作者：

WILLIAMS, DM ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.102746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Yb-doped InP has been prepared by metalorganic vapor phase epitaxy using a Yb fluorinated beta-diketonate. The doped layers were n type with carrier concentrations ranging from 0.6 to 17×1015 cm -3. The doped layers exhibited the characteristic Yb +3-4f photoluminescent emission at 1.23 eV. The low-temperature photoluminescence indicates the association of Yb with other centers to form complexes.

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页码：566 / 568

页数：3

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