VACANCY COMPLEXES IN CR-DOPED GAAS

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[2] COLLINS JD, 1986, DEFECTS SEMICONDUCTO, P1081

[3] MONOVACANCY FORMATION ENTHALPY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2195 - 2198

[4] VACANCY INTERACTIONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 591 - 594

[5] DANNEFAER S, 1986, DEFECTS SEMICONDUCTO, P103

[6] DANNEFAER S, 1987, 7TH AM C CRYST GROWT

[7] ON THE EXCITED AND METASTABLE STATES OF CR-RELATED DOUBLE CENTERS IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (23): : 4561 - 4578

[8] POSITIVE IDENTIFICATION OF THE CR4+-]CR3+ THERMAL TRANSITION IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (23) : 1728 - 1731

[9] Newman R. C., 1985, Thirteenth International Conference on Defects in Semiconductors, P87

[10] POSITRON STUDIES OF CONDENSED MATTER [J]. ADVANCES IN PHYSICS, 1973, 22 (03) : 263 - 383

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[2] COLLINS JD, 1986, DEFECTS SEMICONDUCTO, P1081

[3] MONOVACANCY FORMATION ENTHALPY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2195 - 2198

[4] VACANCY INTERACTIONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 591 - 594

[5] DANNEFAER S, 1986, DEFECTS SEMICONDUCTO, P103

[6] DANNEFAER S, 1987, 7TH AM C CRYST GROWT

[7] ON THE EXCITED AND METASTABLE STATES OF CR-RELATED DOUBLE CENTERS IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (23): : 4561 - 4578

[8] POSITIVE IDENTIFICATION OF THE CR4+-]CR3+ THERMAL TRANSITION IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (23) : 1728 - 1731

[9] Newman R. C., 1985, Thirteenth International Conference on Defects in Semiconductors, P87

[10] POSITRON STUDIES OF CONDENSED MATTER [J]. ADVANCES IN PHYSICS, 1973, 22 (03) : 263 - 383