INFLUENCE OF 2-LEVEL PLANAR INTERCONNECTION PROCESSES USING BIAS-SPUTTERED SIO2 FOR MOSFETS

被引:2
作者
TSUNEKAWA, S
KUME, H
HOMMA, Y
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D O I
10.1149/1.2097527
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2632 / 2637
页数:6
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共 14 条
[11]  
TSUNEKAWA S, 1983, ELECTROCHEMICAL SOC, V832, P436
[12]  
Wada Y., 1983, International Electron Devices Meeting 1983. Technical Digest, P323
[13]   ANNEALING OF MOS CAPACITORS WITH IMPLICATIONS FOR TEST PROCEDURES TO DETERMINE RADIATION HARDNESS [J].
WINOKUR, PS ;
BOESCH, HE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4088-4094
[14]   THE INFLUENCE OF INTERNAL-STRESSES IN TUNGSTEN-GATE ELECTRODES ON THE DEGRADATION OF MOSFET CHARACTERISTICS CAUSED BY HOT CARRIERS [J].
YAMAMOTO, N ;
IWATA, S ;
KUME, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) :607-614