THE INFLUENCE OF INTERNAL-STRESSES IN TUNGSTEN-GATE ELECTRODES ON THE DEGRADATION OF MOSFET CHARACTERISTICS CAUSED BY HOT CARRIERS

被引：16

作者：

YAMAMOTO, N

IWATA, S

KUME, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：607 / 614

页数：8

相关论文

共 10 条

[1] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS
ELLIOT, ABM
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 241 - 247
[2] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION
FAIR, RB
SUN, RC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) : 83 - 94
[3] GENERATION OF INTERFACE STATES BY HOT HOLE INJECTION IN MOSFETS
GESCH, H
LEBURTON, JP
DORDA, GE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) : 913 - 918
[4] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR
OGURA, S
TSANG, PJ
WALKER, WW
CRITCHLOW, DL
SHEPARD, JF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367
[5] INTERNAL STRESSES AND RESISTIVITY OF LOW-VOLTAGE SPUTTERED TUNGSTEN FILMS
SUN, RC
TISONE, TC
CRUZAN, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1009 - 1016
[6] AN AS-P(N+-N-) DOUBLE DIFFUSED DRAIN MOSFET FOR VLSIS
TAKEDA, E
KUME, H
NAKAGOME, Y
MAKINO, T
SHIMIZU, A
ASAI, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 652 - 657
[7] TUNGSTEN METALLIZATION FOR LSI APPLICATIONS
WAGNER, RS
SINHA, AK
SHENG, TT
LEVINSTEIN, HJ
ALEXANDER, FB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (03): : 582 - 590
[8] FABRICATION OF HIGHLY RELIABLE TUNGSTEN GATE MOS VLSIS
YAMAMOTO, N
KUME, H
IWATA, S
YAGI, K
KOBAYASHI, N
MORI, N
MIYAZAKI, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) : 401 - 407
[9] YAMAMOTO N, 1984, 2ND P INT S VLSI SCI, P361
[10] YAMAMOTO N, 1983, 15TH C SOL STAT DEV, P217