ELECTRON SATURATION VELOCITY IN GA0.5INP0.5INP0.5P MEASURED IN A GALNP/GAAS/GALNP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：14

作者：

LIU, W

HENDERSON, T

FAN, SK

机构：

[1] Central Research Laboratories, Texas Instruments, Dallas, TX

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 21期

关键词：

HETEROJUNCTION BIPOLAR TRANSISTORS; CARRIER MOBILITY;

D O I：

10.1049/el:19931255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first (not necessarily typical) performance measurements on Ga0.5In0.5P/GaAs/Ga0.5In0.5P double-heterojunction bipolar transistors are reported. The measured cutoff frequency and maximum oscillation frequency are 25 and 35GHz, respectively. From various measurements of f(T) under various bias conditions, the value of the electron saturation velocity in GaInP is determined to be 4.4 x 10(6)cm/s.

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页码：1885 / 1887

页数：3

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