DERIVATION OF THE EMITTER COLLECTOR TRANSIT-TIME OF HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：14

作者：

LIU, W ^{[1
]}

COSTA, D ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 04期

关键词：

D O I：

10.1016/0038-1101(92)90118-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various expressions for the emitter-collector transit time of a heterojunction bipolar transistor (HBT) can be found in the literature. It is not obvious whether the product of the emitter contact resistance and the base-emitter capacitance should be included in the emitter-collector transit time expression. This paper theoretically demonstrates that the above product does not appear in the transit time expression. Additional physical insights observed from the derived transit time expression and comparison to a similar expression for homojunction bipolar transistors will be discussed.

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收藏

页码：541 / 545

页数：5

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