APPLICATION OF ALGAAS/GAAS HBTS TO HIGH-SPEED CML LOGIC FAMILY FABRICATION

被引:2
作者
MADIHIAN, M [1 ]
TANAKA, SI [1 ]
HAYAMA, N [1 ]
OKAMOTO, A [1 ]
HONJO, K [1 ]
机构
[1] NEC CORP,CENT RES LABS,KAWASAKI,KANAGAWA 213,JAPAN
关键词
D O I
10.1109/16.22466
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:625 / 631
页数:7
相关论文
共 13 条
[1]   AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J].
CHANG, MF ;
ASBECK, PM ;
WANG, KC ;
SULLIVAN, GJ ;
MILLER, DL .
ELECTRONICS LETTERS, 1986, 22 (22) :1173-1174
[2]   SUBMICROMETER FULLY SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].
HAYAMA, N ;
OKAMOTO, A ;
MADIHIAN, M ;
HONJO, K .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :246-248
[3]   A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J].
ISHIBASHI, T ;
YAMAUCHI, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) :401-404
[4]   HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].
KROEMER, H .
PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25
[5]   THE DESIGN, FABRICATION, AND CHARACTERIZATION OF A NOVEL ELECTRODE STRUCTURE SELF-ALIGNED HBT WITH A CUTOFF FREQUENCY OF 45 GHZ [J].
MADIHIAN, M ;
HONJO, K ;
TOYOSHIMA, H ;
KUMASHIRO, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1419-1428
[6]  
MADIHIAN M, 1987, OCT GAAS IC S DIG, P113
[7]   IMPROVEMENT IN AIGAAS/GAAS HBT POWER GAINS WITH BURIED PROTON-IMPLANTED LAYER [J].
NAKAJIMA, O ;
NAGATA, K ;
YAMAUCHI, Y ;
ITO, H ;
ISHIBASHI, T .
ELECTRONICS LETTERS, 1986, 22 (25) :1317-1318
[8]  
OKI AK, 1987, OCT GAAS IC S, P137
[9]   NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR-TRANSISTOR USING A PATTERN-INVERSION METHOD [J].
TANAKA, S ;
MADIHIAN, M ;
TOYOSHIMA, H ;
HAYAMA, N ;
HONJO, K .
ELECTRONICS LETTERS, 1987, 23 (11) :562-564
[10]  
TOPHAM PJ, 1986, OCT GAAS IC S DIG, P167