MEASUREMENT OF YOUNG MODULUS AND INTERNAL-STRESS IN SILICON MICRORESONATORS USING A RESONANT-FREQUENCY TECHNIQUE

The values of Young's modulus and internal stress in boron doped silicon microresonators fabricated by anisotropic etching techniques are reported. An array of resonators has been fabricated on a (100) orientation substrate and their resonant frequencies measured. Using the measured data, and equations relating the resonant frequencies to mechanical properties, the Young's modulus of the boron doped silicon is calculated to be 1.33*1011 Pa whilst the built-in stress is calculated to be 1.12*108 Pa.