ATOMIC-HYDROGEN CLEANING OF GAAS AND INP SURFACES STUDIED BY PHOTOEMISSION SPECTROSCOPY

被引：31

作者：

KIKAWA, T

OCHIAI, I

TAKATANI, S

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo, 185, 1-280, Higashi-Koigakubo

来源：

SURFACE SCIENCE | 1994年 / 316卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)91216-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cleaning of GaAs and InP surfaces by atomic hydrogen (H*) beam irradiation was investigated using synchrotron radiation photoemission spectroscopy and Auger electron spectroscopy. The surfaces were irradiated by a H* beam generated by a hot tungsten tube at a sample temperature of 360 degrees C. After the H*-beam irradiation, the GaAs and InP surfaces exhibited a streaky (2 X 1) and (2 X 4) RHEED pattern, respectively. It took a longer irradiation time to clean the InP surface than the GaAs surface. Photoemission spectroscopy revealed that the most persistent oxide in the H* cleaning process is Ga2O3 for the GaAs surface, and In(PO3)(3) for the InP surface.

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页码：238 / 246

页数：9

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