OXIDATION KINETICS OF POWDERED SILICON NITRIDE

被引：43

作者：

HORTON, RM

机构：

[1] Department of Metallurgy, Washington State University, Pullman, Washington

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1969年 / 52卷 / 03期

关键词：

D O I：

10.1111/j.1151-2916.1969.tb11195.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The oxidation kinetics of powdered silicon nitride were studied in dry oxygen and dry air at 1 atm pressure between 1065° and 1340°C. An automatic recording electrobalance was used to measure the weight gain as a function of time. Parabolic oxidation kinetics were observed with an activation energy of 61 kcal/mol in dry oxygen and 68 kcal/mol in dry air. The oxidation rate in dry oxygen was approximately twice that in air. The solid oxidation product was tridymite above 1125°C and amorphous silica at 1067°C. Copyright © 1969, Wiley Blackwell. All rights reserved

引用

页码：121 / +

页数：1

共 23 条

[1] OXIDATION OF SILICON CARBIDE IN THE TEMPERATURE RANGE 1200-DEGREES TO 1500-DEGREES
ADAMSKY, RF
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1959, 63 (02) : 305 - 307
[2] The Formation and Devitrification of Oxides on Silicon
Ainger, F. W.
[J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (01) : 1 - 13
[3] BURKHARDT PJ, 1966, T METALL SOC AIME, V236, P299
[4] KINETIC MODEL FOR SOLID-STATE REACTIONS
CARTER, RE
[J]. JOURNAL OF CHEMICAL PHYSICS, 1961, 34 (06) : 2010 - &
[5] THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 527 - 533
[6] DEAL BE, 1965, J APPL PHYS, V36, P2770
[7] RATES OF FORMATION OF THERMAL OXIDES OF SILICON
EVITTS, HC
COOPER, HW
FLASCHEN, SS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (06) : 688 - 690
[8] GRAY TJ, 1957, DEFECT SOLID STATE, P436
[9] HAUL R, 1962, Z ELEKTROCHEM, V66, P636
[10] EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION
JORGENSEN
[J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 874 - &

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