SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS OF THE DIAMOND CRYSTALLINE SI INTERFACE IN CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE DIAMOND FILMS

被引:9
作者
CIFRE, J
CAMPMANY, J
BERTRAN, E
ESTEVE, J
机构
[1] Department Fisica Aplicada i Electrònica, Universitat de Barcelona, E-08028 Barcelona
关键词
D O I
10.1016/0925-9635(93)90212-K
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optical characterization of polycrystalline diamond films has been performed by spectroscopic phase-modulated ellipsometry measurements in the UV-visible range. The films were obtained from a gas mixture of methane diluted in hydrogen in a hot-filament chemical vapour deposition system on crystalline silicon wafers previously polished with diamond powder. The ellipsometric measurements were obtained from the structure interface-layer/diamond-film after a chemical etching of the substrate. The back surface of the diamond films exhibits a specular surface with high reflectivity, allowing precise ellipsometric measurements. A two-layer structure is deduced from the ellipsometric data and it is discussed together with the X-ray diffraction results.
引用
收藏
页码:728 / 731
页数:4
相关论文
共 9 条
[1]  
AZZAM RMA, 1989, ELLIPSOMETRY POLARIZ, pCH4
[3]   INSITU OPTICAL CHARACTERIZATIONS FOR RF PLASMA DEPOSITED A-SI - H THIN-FILMS [J].
CANILLAS, A ;
BERTRAN, E ;
ANDUJAR, JL ;
MORENZA, JL .
VACUUM, 1989, 39 (7-8) :785-787
[4]   ANALYSIS OF CONTAMINATION IN DIAMOND FILMS BY SECONDARY ION MASS-SPECTROSCOPY [J].
CIFRE, J ;
LOPEZ, F ;
MORENZA, JL ;
ESTEVE, J .
DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) :500-503
[5]   REAL-TIME AND SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF DIAMOND AND DIAMOND-LIKE CARBON [J].
COLLINS, RW ;
CONG, Y ;
KIM, YT ;
VEDAM, K ;
LIOU, Y ;
INSPEKTOR, A ;
MESSIER, R .
THIN SOLID FILMS, 1989, 181 :565-578
[6]   CHARACTERIZATION OF ION BEAM-INDUCED SURFACE MODIFICATION OF DIAMOND FILMS BY REAL-TIME SPECTROSCOPIC ELLIPSOMETRY [J].
CONG, Y ;
COLLINS, RW ;
MESSIER, R ;
VEDAM, K ;
EPPS, GF ;
WINDISCHMANN, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1991, 9 (03) :1123-1128
[7]   SPECTRO-ELLIPSOMETRY CHARACTERIZATION OF OPTICAL-QUALITY VAPOR-DEPOSITED DIAMOND THIN-FILMS [J].
CONG, Y ;
COLLINS, RW ;
EPPS, GF ;
WINDISCHMANN, H .
APPLIED PHYSICS LETTERS, 1991, 58 (08) :819-821
[8]   TUNGSTEN INCORPORATION IN DIAMOND THIN-FILMS PREPARED BY THE HOT-FILAMENT TECHNIQUE [J].
GHEERAERT, E ;
DENEUVILLE, A ;
BRUNEL, M ;
OBERLIN, JC .
DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) :504-507
[9]   IN-PROCESS ELLIPSOMETRIC MONITORING OF DIAMOND FILM GROWTH BY MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
HAYASHI, Y ;
DRAWL, W ;
COLLINS, RW ;
MESSIER, R .
APPLIED PHYSICS LETTERS, 1992, 60 (23) :2868-2870