A STUDY OF DEEP METAL-RELATED CENTERS IN GERMANIUM BY CAPACITANCE SPECTROSCOPY

被引：7

作者：

PEARTON, SJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 06期

关键词：

D O I：

10.1016/0038-1101(82)90164-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：499 / 503

页数：5

共 17 条

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[8] DEEP LEVEL TRANSIENT SPECTROSCOPY OF HIGH-PURITY GERMANIUM DIODES-DETECTORS [J].

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