HOT-ELECTRONS IN SIO2 - BALLISTIC TO STEADY-STATE TRANSPORT

被引:20
作者
FISCHETTI, MV
DIMARIA, DJ
机构
关键词
D O I
10.1016/0038-1101(88)90357-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:629 / 636
页数:8
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共 34 条
[1]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[2]   PHOTOINJECTION INTO SIO2 - ELECTRON SCATTERING IN IMAGE FORCE POTENTIAL WELL [J].
BERGLUND, CN ;
POWELL, RJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :573-+
[3]   DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE [J].
BRORSON, SD ;
DIMARIA, DJ ;
FISCHETTI, MV ;
PESAVENTO, FL ;
SOLOMON, PM ;
DONG, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1302-1313
[4]   ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS [J].
DIMARIA, DJ ;
FISCHETTI, MV ;
ARIENZO, M ;
TIERNEY, E .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1719-1726
[5]   DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE [J].
DIMARIA, DJ ;
FISCHETTI, MV ;
TIERNEY, E ;
BRORSON, SD .
PHYSICAL REVIEW LETTERS, 1986, 56 (12) :1284-1286
[6]   DIRECT OBSERVATION OF BALLISTIC ELECTRONS IN SILICON DIOXIDE [J].
DIMARIA, DJ ;
FISCHETTI, MV ;
BATEY, J ;
DORI, L ;
TIERNEY, E ;
STASIAK, J .
PHYSICAL REVIEW LETTERS, 1986, 57 (25) :3213-3216
[7]   ELECTRON HEATING IN SILICON DIOXIDE AND OFF-STOICHIOMETRIC SILICON DIOXIDE FILMS [J].
DIMARIA, DJ ;
THEIS, TN ;
KIRTLEY, JR ;
PESAVENTO, FL ;
DONG, DW ;
BRORSON, SD .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1214-1238
[8]  
DIMARIA DJ, 1987, APPL PHYS LETT 0813
[9]   IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J].
DISTEFANO, TH ;
SHATZKES, M .
APPLIED PHYSICS LETTERS, 1974, 25 (12) :685-687
[10]  
FEIGL FJ, 1986, PHYSICS TODAY, V30, P47