DEFECTS AT THE SI(111)/SIO2 INTERFACE INVESTIGATED WITH LOW-ENERGY ELECTRON-DIFFRACTION

被引：22

作者：

WOLLSCHLAGER, J

HENZLER, M

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.39.6052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6052 / 6059

页数：8

共 28 条

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