EXAMINATION OF SI(100) SURFACES TREATED BY ULTRAPURE WATER WITH 5 PPB DISSOLVED-OXYGEN CONCENTRATION

被引：31

作者：

KANAYA, H

USUDA, K

YAMADA, K

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, Komukai Toshiba-cho

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.115202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si(100) surfaces treated by ultrapure water with 5 ppb dissolved oxygen concentration after dipping in HF solution were examined by attenuated total reflection (ATR)-Fourier-transform infrared (FT-IR) spectroscopy, transmittance FT-IR, and reflection high energy electron diffraction (RHEED). FT-IR spectra and RHEED patterns depended on the rinsing time in the ultrapure water. The (111) and (110) facets appeared after rinsing for a long period of time (20-45 h) in 5 ppb dissolved oxygen concentration ultrapure water. It was suggested that the surface morphology depended on not only pH value but also the amount of etching. (C) 1995 American Institute of Physics.

引用

页码：682 / 684

页数：3

共 8 条

[1] MORPHOLOGY OF HYDROGEN-TERMINATED SI(111) AND SI(100) SURFACES UPON ETCHING IN HF AND BUFFERED-HF SOLUTIONS [J].