HOMOGENEOUS HYDROGEN-TERMINATED SI(111) SURFACE FORMED USING AQUEOUS HF SOLUTION AND WATER

被引:174
作者
WATANABE, S
NAKAYAMA, N
ITO, T
机构
[1] Fujitsu Laboratories Ltd., Atsugi 243
关键词
D O I
10.1063/1.105287
中图分类号
O59 [应用物理学];
学科分类号
摘要
Aqueous HF etching of silicon surface removes surface oxide, leaving a silicon surface terminated by atomic hydrogen. We studied the effect of the immersion in water, following HF etching, on the surface hydride structure and flatness, by measuring Si-H stretching vibration using infrared absorption spectroscopy. Immersion at 20-degrees-C flattens the Si(111) surface, which is atomically rough just after etching, to some extent. Boiling water (100-degrees-C) produces an atomically flat surface homogeneously covered with silicon monohydride (-SiH) normal to the surface and free of oxidation. The surface has a low defect density of less than 0.5%.
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页码:1458 / 1460
页数:3
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