DEVICE EFFECTS OF DISLOCATIONS

[1] DISLOCATIONS AND BRITTLE FRACTURE IN ELEMENTAL AND COMPOUND SEMICONDUCTORS [J]. ACTA METALLURGICA, 1960, 8 (09): : 654 - 662

[2] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1973 - &

[3] ORIENTATION EFFECT IN GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2596 - &

[4] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287

[5] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[6] Allen J.W., 1956, J ELECTRONICS, V1, P580

[7] BARDSLEY W, 1960, PROGRESS SEMICONDUCT, V4, P157

[8] ONSET OF STIMULATED EMISSION FROM GALLIUM ARSENIDE SEMICONDUCTOR OPTICAL MASERS [J]. NATURE, 1963, 198 (487) : 368 - &

[9] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110

[10] ELECTRON-MICROSCOPE STUDY OF ELECTRICALLY ACTIVE IMPURITY PRECIPITATE DEFECTS IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (06): : 1419 - 1443

[1] DISLOCATIONS AND BRITTLE FRACTURE IN ELEMENTAL AND COMPOUND SEMICONDUCTORS [J]. ACTA METALLURGICA, 1960, 8 (09): : 654 - 662

[2] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 1973 - &

[3] ORIENTATION EFFECT IN GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2596 - &

[4] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287

[5] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[6] Allen J.W., 1956, J ELECTRONICS, V1, P580

[7] BARDSLEY W, 1960, PROGRESS SEMICONDUCT, V4, P157

[8] ONSET OF STIMULATED EMISSION FROM GALLIUM ARSENIDE SEMICONDUCTOR OPTICAL MASERS [J]. NATURE, 1963, 198 (487) : 368 - &

[9] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110

[10] ELECTRON-MICROSCOPE STUDY OF ELECTRICALLY ACTIVE IMPURITY PRECIPITATE DEFECTS IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (06): : 1419 - 1443