METAL-OVERLAP LATERALLY-DIFFUSED (MOLD) SCHOTTKY DIODE

被引：9

作者：

RUSU, A

BULUCEA, C

POSTOLACHE, C

机构：

[1] POLYTECH INST BUCHAREST, DEPT ELECTR, BUCHAREST, ROMANIA

[2] ICCE, R & D INST ELECTR COMPONENTS, BUCHAREST, ROMANIA

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 06期

关键词：

D O I：

10.1016/S0038-1101(77)81006-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：499 / +

页数：1

共 29 条

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[2]

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POSTOLACHE, C .

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[6]

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[7]

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[8] GOLD-EPITAXIAL SILICON HIGH-FREQUENCY DIODES [J].

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[9] CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J].

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[10]

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