ZINC SEGREGATION IN CDZNTE GROWN UNDER CD/ZN PARTIAL-PRESSURE CONTROL

被引：33

作者：

AZOULAY, M

ROTTER, S

GAFNI, G

TENNE, R

ROTH, M

机构：

[1] WEIZMANN INST SCI,IL-76100 REHOVOT,ISRAEL

[2] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,IL-91904 JERUSALEM,ISRAEL

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90759-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CdZnTe crystals have been grown by the modified vertical gradient freeze (VGF) method. Growth atmosphere control has been introduced to compensate for the Zn depletion in the melt during solidification. The axial Zn concentration in the grown crystals is found to be uniform within +/- 3%, as evaluated by X-ray diffraction and electron microprobe analysis. The radial segragation of Zn is minimal and does not exceed the experimental error due to the nearly planar interface achieved. Zinc microsegregation has been studied as well and is discussed in terms of the temporal variations of the solute concentration at the growth interface.

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页码：276 / 280

页数：5

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