THE FORMATION OF TITANIUM SILICIDE BY ARSENIC ION-BEAM MIXING AND RAPID THERMAL ANNEALING

[1] RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3385 - 3394

[2] DAVIES P, UNPUB J ELECTROCHEM

[3] DOWBEN SL, 1985, P MATER RES SOC S, V48, P355

[4] AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2240 - 2245

[5] MITRA UN, 1986, 5TH P INT S SIL MAT, P316

[6] INFLUENCE OF THE INTERFACIAL OXIDE ON TITANIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 775 - 780

[7] Shibata T., 1981, International Electron Devices Meeting, P647

[8] TSAUR BY, 1979, THIN SOLID FILMS, V63, P31, DOI 10.1016/0040-6090(79)90095-6

[9] SELECTIVE TUNGSTEN SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1890 - 1894

[10] INTERFACE MODIFICATION OF REFRACTORY METAL-SILICON STRUCTURES BY ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1909 - 1912

[1] RECOIL CONTRIBUTION TO ION-IMPLANTATION ENERGY-DEPOSITION DISTRIBUTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3385 - 3394

[2] DAVIES P, UNPUB J ELECTROCHEM

[3] DOWBEN SL, 1985, P MATER RES SOC S, V48, P355

[4] AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2240 - 2245

[5] MITRA UN, 1986, 5TH P INT S SIL MAT, P316

[6] INFLUENCE OF THE INTERFACIAL OXIDE ON TITANIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 775 - 780

[7] Shibata T., 1981, International Electron Devices Meeting, P647

[8] TSAUR BY, 1979, THIN SOLID FILMS, V63, P31, DOI 10.1016/0040-6090(79)90095-6

[9] SELECTIVE TUNGSTEN SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1890 - 1894

[10] INTERFACE MODIFICATION OF REFRACTORY METAL-SILICON STRUCTURES BY ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1909 - 1912