PLASMA DEPOSITED SILICON-NITRIDE FOR GALLIUM-ARSENIDE ENCAPSULATION

被引：15

作者：

VALCO, GJ ^{[1
]}

KAPOOR, VJ ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT ELECT & COMP ENGN,CINCINNATI,OH 45221

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

10.1149/1.2100532

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：685 / 692

页数：8

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