ANALYTICAL MODELING OF THE MOS-TRANSISTOR

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 621 - 641

[2] CHARGE-SHEET MODEL OF MOSFET [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 345 - 355

[3] Burstein E., 1957, SEMICONDUCTOR SURFAC

[4] INFLUENCE OF SOURCE-DRAIN SERIES RESISTANCE ON MOSFET FIELD-EFFECT MOBILITY [J]. ELECTRONICS LETTERS, 1985, 21 (11) : 457 - 458

[5] Fang Z. H., 1986, Noise in Physical Systems and 1/f Noise - 1985. Proceedings of the 8th International Conference on `Noise in Physical Systems' and the 4th International Conference on `1/f Noise', P401

[6] AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR DEPLETION-MODE MOS-TRANSISTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 103 (01): : 317 - 325

[7] ANALYTICAL MODELING OF THE TRANSCONDUCTANCE OF SHORT CHANNEL MOSFETS IN THE SATURATION REGION [J]. SOLID-STATE ELECTRONICS, 1989, 32 (01) : 87 - 89

[8] MODELING OF OHMIC MOSFET OPERATION AT VERY LOW-TEMPERATURE [J]. SOLID-STATE ELECTRONICS, 1988, 31 (01) : 105 - 108

[9] AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR ENHANCED-MODE MOSFETS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01): : 323 - 335

[10] CALCULATION OF SURFACE-CHARGE NOISE AT THE SI-SIO2 INTERFACE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02): : 917 - 930

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 621 - 641

[2] CHARGE-SHEET MODEL OF MOSFET [J]. SOLID-STATE ELECTRONICS, 1978, 21 (02) : 345 - 355

[3] Burstein E., 1957, SEMICONDUCTOR SURFAC

[4] INFLUENCE OF SOURCE-DRAIN SERIES RESISTANCE ON MOSFET FIELD-EFFECT MOBILITY [J]. ELECTRONICS LETTERS, 1985, 21 (11) : 457 - 458

[5] Fang Z. H., 1986, Noise in Physical Systems and 1/f Noise - 1985. Proceedings of the 8th International Conference on `Noise in Physical Systems' and the 4th International Conference on `1/f Noise', P401

[6] AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR DEPLETION-MODE MOS-TRANSISTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 103 (01): : 317 - 325

[7] ANALYTICAL MODELING OF THE TRANSCONDUCTANCE OF SHORT CHANNEL MOSFETS IN THE SATURATION REGION [J]. SOLID-STATE ELECTRONICS, 1989, 32 (01) : 87 - 89

[8] MODELING OF OHMIC MOSFET OPERATION AT VERY LOW-TEMPERATURE [J]. SOLID-STATE ELECTRONICS, 1988, 31 (01) : 105 - 108

[9] AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR ENHANCED-MODE MOSFETS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01): : 323 - 335

[10] CALCULATION OF SURFACE-CHARGE NOISE AT THE SI-SIO2 INTERFACE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02): : 917 - 930