INFLUENCE OF DOSE EFFECTS ON DEPTH DISTRIBUTION OF IMPLANTED PARTICLES

被引：4

作者：

KONOPLEV, VM

机构：

[1] Uzbek Acad of Sciences, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 43卷 / 02期

关键词：

Computer Simulation - Gold Compounds - Ion Beams;

D O I：

10.1016/0168-583X(89)90030-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The influence of irradiation dose effects on the depth distribution of implanted atoms for 120 keV gold ion implantation into silicon was investigated. A dynamic computer code DYNA based on the binary collision approximation was used to describe the implantation process. Simulation results were analyzed and compared with the pertinent experimental data and results, which were obtained in the framework of the LSS model. Conclusions related to the substantial influence of dose effects such as range shortening and ballistic mixing on the shape of the depth distribution profile are drawn.

引用

页码：159 / 161

页数：3

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