THE OPTICAL-PROPERTIES OF LUMINESCENCE-CENTERS IN SILICON

被引:489
作者
DAVIES, G
机构
来源
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS | 1989年 / 176卷 / 3-4期
关键词
D O I
10.1016/0370-1573(89)90064-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:83 / 188
页数:106
相关论文
共 302 条
[11]  
BENTON JL, 1988, MATER RES SOC S P, V104, P85
[12]   RELAXATION OF AUGER-EXCITED CARRIERS IN SILICON [J].
BETZLER, K .
SOLID STATE COMMUNICATIONS, 1974, 15 (11-1) :1837-1840
[13]   2-ELECTRON BAND-TO-BAND TRANSITIONS IN SOLIDS [J].
BETZLER, K ;
WELLER, T ;
CONRADT, R .
PHYSICAL REVIEW B, 1972, 6 (04) :1394-&
[14]   TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J].
BLUDAU, W ;
ONTON, A ;
HEINKE, W .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1846-1848
[15]  
BORTNIK MV, 1967, SOV PHYS SEMICOND+, V1, P290
[16]   ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J].
BOSOMWORTH, DR ;
HAYES, W ;
SPRAY, ARL ;
WATKINS, GD .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) :133-+
[17]   THRESHOLD ENERGY DETERMINATION IN THICK SEMICONDUCTOR SAMPLES [J].
BOURGOIN, JC ;
LUDEAU, P ;
MASSARANI, B .
REVUE DE PHYSIQUE APPLIQUEE, 1976, 11 (02) :279-284
[18]  
BRELOT A, 1971, RADIAT EFF, V8, P161
[19]  
BROWER KL, 1978, PHYS REV B, V17, P4130, DOI 10.1103/PhysRevB.17.4130
[20]   EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J].
BROWER, KL .
PHYSICAL REVIEW B, 1974, 9 (06) :2607-2617