TELLURIUM INDUCED LATTICE DILATION IN OMVPE GROWN INP

被引：4

作者：

KELLERT, FG

CHAN, KT

TURNER, JE

ROBBINS, VM

机构：

[1] HEWLETT PACKARD CO,CIRCUIT TECHNOL RES & DEV,PALO ALTO,CA 94304

[2] HEWLETT PACKARD CO,HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 12期

关键词：

OMVPE; INP; TE; DOPING; LATTICE CONSTANT;

D O I：

10.1007/BF02662833

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For organometallic vapor phase epitaxial (OMVPE) grown InP, the change in lattice constant is measured as a function of tellurium (Te) dopant concentration. We observe approximately 0.15% dilation in the InP lattice constant at a Te concentration of approximately 10(20) cm-3. Our measurements are compared to predictions from Vegard's Law.

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页码：1425 / 1428

页数：4

相关论文

共 17 条

[1] A COMPARISON OF IV-N-DOPANTS AND VI-N-DOPANTS FOR MOVPE-GROWN INP [J].

CLAWSON, AR ;

VU, TT ;

ELDER, DI .

JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) :211-218

[2]

CLAWSON AR, 1990, ELECTRON MATER C SAN

[3]

DEAN JA, 1979, LANGES HDB CHEM, P3

[4] LATTICE CONTRACTION DUE TO CARBON DOPING OF GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

DELYON, TJ ;

WOODALL, JM ;

GOORSKY, MS ;

KIRCHNER, PD .

APPLIED PHYSICS LETTERS, 1990, 56 (11) :1040-1042

[5]

DOBSON PS, 1979, I PHYS C SER, V45, P163

[6]

Driscoll C.M.H., 1975, IOP C P GALL ARS REL, V24, P275

[7] GROWTH OF LARGE DIAMETER DISLOCATION-FREE INDIUM-PHOSPHIDE INGOTS [J].

FARGES, JP ;

SCHILLER, C ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) :159-166

[8] INFLUENCE OF GROWTH-SOLUTION DOPANTS ON DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF INGAASP [J].

FENG, M ;

TASHIMA, MM ;

COOK, LW ;

MILANO, RA ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :91-93

[9] DOPING STUDIES FOR INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

HSU, CC ;

YUAN, JS ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :535-542

[10] CHARACTERIZATION OF INP GROWN BY OMVPE USING TRIMETHYLINDIUM AND TERTIARYBUTYLPHOSPHINE (TBP) AT LOW V/III RATIOS AND REDUCED TBP PARTIAL PRESSURES [J].

KELLERT, FG ;

WHELAN, JS ;

CHAN, KT .

JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (03) :355-360