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TELLURIUM INDUCED LATTICE DILATION IN OMVPE GROWN INP

被引：4
作者：
KELLERT, FG
CHAN, KT
TURNER, JE
ROBBINS, VM
机构：
[1] HEWLETT PACKARD CO,CIRCUIT TECHNOL RES & DEV,PALO ALTO,CA 94304
[2] HEWLETT PACKARD CO,HEWLETT PACKARD LABS,PALO ALTO,CA 94304
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 12期
关键词：
OMVPE; INP; TE; DOPING; LATTICE CONSTANT;
D O I：
10.1007/BF02662833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For organometallic vapor phase epitaxial (OMVPE) grown InP, the change in lattice constant is measured as a function of tellurium (Te) dopant concentration. We observe approximately 0.15% dilation in the InP lattice constant at a Te concentration of approximately 10(20) cm-3. Our measurements are compared to predictions from Vegard's Law.
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收藏
页码：1425 / 1428
页数：4
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