OMVPE GROWTH OF IN0.53GA0.47AS ON INP USING TERTIARY-BUTYLARSINE

被引：3

作者：

KELLERT, FG

CHAN, KT

机构：

[1] Microwave Technology Division, Hewlett-Packard Company, Santa Rosa, 95403, CA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 04期

关键词：

In[!sub]0.53[!/sub]Ga[!sub]0.47[!/sub]As; OMVPE; tertiarybutylarsine;

D O I：

10.1007/BF02651290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully grown bulk In0.53Ga0.47As on InP using tertiarybutylarsine (TBA), trimethylindium and trimethylgallium. The growth temperature was 602° and the V/III ratio ranged from 19 to 38. Net carrier concentrations were 2 - 4 × 1015 cm-3, n-type, with a peak 77 K mobility of 68,000 cm2/V. sec. Increasing compensation was observed in In0.53Ga0.47As grown at higher V/III ratios. PL spectra taken at 5 K revealed strong near bandgap emission at 0.81 eV-with the best sample having a FWHM of 2.5 meV. At lower energies, donor-acceptor pair transitions were evident. Strong and sharp 5 K PL emission was observed from InP/In0.53Ga0.47As/InP quantum wells grown with TBA. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：311 / 315

页数：5

共 17 条

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